ds31225 rev. 2 ? 2 1 of 4 www.diodes.com dxt5551 ? diodes incorporated dxt5551 npn surface mount transistor features ? epitaxial planar die construction ? complementar y pnp type available (dxt5401) ? ideally suited for automated assembly processes ? ideal for medium power switching or amplification applications ? lead free by design/rohs compliant (note 1) ? "gree n" device (note 2) mechanical data ? case: sot89-3l ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity : level 1 per j-std-020c ? terminals: finish - matte ti n a nnealed over copper leadframe (lead free plating). solderable per mil-std-202, method 208 ? marking informat ion: see page 3 ? orde ring information: see page 3 ? weight: 0.072 gr ams (approximate) new product sot89-3l 3 1 2,4 base collector emitter 4 3 2 1 c c b e top view schematic and pin configuration maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6.0 v collector current i c 600 ma thermal characteristics characteristic symbol value unit power dissipation @t a = 25c (note 3) p d 1 w thermal resistance, junction to ambient @t a = 25c (note 3) r ja 125 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min max unit test c ondition off characteristics (note 4) collector-base breakdown voltage v (br)cbo 180 ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 160 ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 ? v i e = 10 a, i c = 0 collector cutoff current i cbo ? 50 na a v cb = 120v, i e = 0 v cb = 120v, i e = 0, t a = 100 c emitter cutoff current i ebo ? 50 na v eb = 4.0v, i c = 0 on characteristics (note 4) dc current gain h fe 80 80 30 ? 250 ? ? v ce = 5.0v, i c = 1.0ma v ce = 5.0v, i c = 10ma v ce = 5.0v, i c = 50ma collector-emitter saturation voltage v ce(sat) ? 0.15 0.20 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma base-emitter saturation voltage v be(sat) ? 1.0 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo ? 6.0 pf v cb = 10v, f = 1.0mhz, i e = 0 small signal current gain h fe 50 200 ? v ce = 10v, i c = 1.0ma, f = 1.0khz current gain-bandwidth product f t 100 300 mhz v ce = 10v, i c = 10ma, f = 100mhz noise figure nf ? 8.0 db v ce = 5.0v, i c = 200 a, r s = 1.0k , f = 1.0khz notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com /products/lead_free/index.php. 3. device mounted on fr-4 pcb, pad layout as shown on page 4 or in diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com /data sheets/ap02001.pdf . 4. measured under pulsed conditions. pulse width = 300 s. d uty cycle 2%.
ds31225 rev. 2 ? 2 2 of 4 www.diodes.com dxt5551 ? diodes incorporated 0 0.2 0.4 25 50 75 100 125 150 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 max power dissipation vs. ambient temperature a 0.6 0.8 1.0 0 01 2345678910 v , collector-emitter voltage (v) ce i, c o lle c t o r c u r r en t (ma) c fig. 2 typical collector current vs. collector-emitter voltage i = 2ma b i = 4ma b i = 6ma b i = 8ma b i = 10ma b i , collector current (ma) c v , collector-emitter saturation voltage (v) ce(sat) fig. 4 typical collector-emitter saturation voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0001 0.001 0.01 0.1 1 i , collector current (a) c v , base-emitter turn-on voltage (v) be(on) fig. 5 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.2 0.0001 0.001 0.01 0.1 1 i , collector current (a) c v , base-emitter saturation voltage (v) be(sat) fig. 6 typical base-emitter saturation voltage vs. collector current 1.0 new product
ds31225 rev. 2 ? 2 3 of 4 www.diodes.com dxt5551 ? diodes incorporated 0.01 0.1 1 10 100 v , reverse voltage (v) r fig. 7 typical capacitance characteristics c obo c ibo f = 1mhz fig. 8 typical gain-bandwidth product vs. collector current v = 10v f = 100mhz ce new product ordering information (note 5) device packaging shipping DXT5551-13 sot89-3l 2500/tape & reel notes: 5. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information y w w (top view) = manufacturer?s code marking k4n = product type marking code yww = date code marking y = last digit of year ex: 7 = 2007 ww = week code 01 - 52 package outline dimensions e d h l a c e 8 ( 4 x ) b1 b d1 r 0 . 2 0 0 sot89-3l dim min max typ a 1.40 1.60 1.50 b 0.45 0.55 0.50 b1 0.37 0.47 0.42 c 0.35 0.43 0.38 d 4.40 4.60 4.50 d1 1.50 1.70 1.60 e 2.40 2.60 2.50 e ? ? 1.50 h 3.95 4.25 4.10 l 0.90 1.20 1.05 all dimensions in mm
ds31225 rev. 2 ? 2 4 of 4 www.diodes.com dxt5551 ? diodes incorporated suggested pad layout 3.0 0.9 2.7 0.4 1.7 1.3 1.9 unit: mm new product important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated.
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